IQE announces strategic partnership with imec

Semiconductor wafer designer and manufacturer IQE announced a new strategic partnership with the imec nanoelectronics research centre on Monday, on Gallium Nitride-on-Silicon technology.

The AIM-traded firm said GaN technology offers faster switching-power devices with higher breakdown voltage and lower on-resistance than silicon, making it an ideal material for advanced power electronic components.

It said the partnership builds on promising results achieved in a recent project where imec and IQE collaborated to fabricate GaN power diodes using imec’s proprietary diode architecture and IQE’s high voltage epiwafers.

"We are delighted to have the opportunity to extend our relationship with imec through the Industrial Affiliation Program,” said IQE Power business unit head Wayne Johnson.

"The importance of GaN-on-Si for power devices cannot be understated, particularly as we enter an era of electrically propelled transportation and increasing demands for energy efficient power control systems that require high voltage and high power capabilities.

"IQE's proven track record in developing and manufacturing GaN based epiwafers, coupled with imec's unquestionable reputation for world-leading research in nanoelectronics makes for a powerful collaboration in this rapidly growing technology space,” Johnson explained.

Imec’s Industrial Affiliation Program offers joint research and development on GaN-on-Si technology to a variety of companies.

As a partner, IQE says it gains access to next-generation epitaxy, devices and power electronics processes, including imec’s complete 200mm CMOS-compatible GaN process line.